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Serveur d'exploration sur le nickel au Maghreb

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Temperature range for re-emission of carriers in GaAs/Ga1− x Al x As superlattices

Identifieur interne : 000C15 ( Main/Exploration ); précédent : 000C14; suivant : 000C16

Temperature range for re-emission of carriers in GaAs/Ga1− x Al x As superlattices

Auteurs : S. Kraiem [Tunisie] ; F. Hassen [Tunisie] ; L. Sfaxi [Tunisie] ; H. Maaref [Tunisie]

Source :

RBID : ISTEX:84920E7815D7B2440EED1C785D5E221686E45331

English descriptors

Abstract

The photoluminescence from n-type doped GaAs/Ga0.57Al0.43As single quantum well (QW) and GaAs/Ga0.54Al0.46As superlattice (SL) heterostructures grown by molecular beam epitaxy was studied in the temperature range 10
Url:
DOI: 10.1016/S0026-2692(99)00011-7


Affiliations:

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Le document en format XML

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